DMN3033LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V (BR)DSS
30V
R DS(ON) max
20m ? @ V GS = 10V
27m ? @ V GS = 4.5V
I D max
T A = +25°C
6.9A
5.8A
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Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
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Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
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Qualified to AEC-Q101 Standards for High Reliability
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
? Case: SO-8
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Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Applications
? Backlighting
? Power Management Functions
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Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
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DC-DC Converters
SO-8
S1
D1
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Weight: 0.072grams (approximate)
D1
D2
G1
S2
D1
D2
G1
G2
Top View
G2
D2
Top View
Internal Schematic
S1
N-channel MOSFET
S2
N-channel MOSFET
Ordering Information (Note 4)
Part Number
DMN3033LSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
8
5
8
5
= Manufacturer’s Marking
N3033LD
YY WW
N3033LD
YY WW
N3033LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
1
4
1
4
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
DMN3033LSD
Document number: DS31262 Rev. 9 - 2
1 of 6
www.diodes.com
February 2014
? Diodes Incorporated
相关PDF资料
DMN3033LSN-7 MOSFET N-CH 30V 6A SC59-3
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DMN3051L-7 MOSFET N-CH 30V 5.8A SOT23-3
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